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HA-5134/883
July 1994
Precision Quad Operational Amplifier
Description
The HA-5134/883 is a precision quad operational amplifier that is pin compatible with the OP-400, LT1014, OP11, RM4156, and LM148 as well as the HA-4741/883. Each amplifier features guaranteed maximum values for offset voltage of 350V, offset voltage drift of 2V/oC (max), and offset current of 75nA over the full military temperature range while CMRR/PSRR is guaranteed greater than 94dB and open loop gain is guaranteed above 500kV/V from -55oC to +125oC. Room temperature specifications exceed these values such as an offset voltage matching specification between channels of 200V (max) at +25oC. Precision performance of the HA-5134/883 is enhanced by a noise voltage density of 7nV/Hz at 1kHz (typ), noise current density of 2pA/Hz at 1kHz and channel separation of 120dB (min). Each of the four unity gain stable amps on the quad are electrically isolated, having only supply lines in common and are fabricated using Dielectric Isolation to insure quality performance in the most demanding applications. The HA-5134/883 is ideal for compact circuits such as instrumentation amplifiers, state-variable filters, and low level transducer amplifiers. Other applications include precision data acquisition systems, precision integrators, and accurate threshold detectors in designs where board space is a limitation.
Features
* This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. * Low Offset Voltage (+25oC). . . . . . . . . . . . .200V (Max) (Full Temp.) . . . . . . . . . . . .350V (Max) * Low Offset Voltage Drift at Temp.. . . . . . . 2V/oC (Max) * Offset Voltage Match . . . . . . . . . . . . . . . . . .350V (Max) * High Channel Separation . . . . . . . . . . . . . . 120dB (Min) * Low Noise (f 100Hz) . . . . . . . . . . . . . . 10nV/Hz (Max) * Wide Bandwidth . . . . . . . . . . . . . . . . . . . . . . 4MHz (Typ) * High CMRR/PSRR . . . . . . . . . . . . . . . . . . . . 100dB (Min) * High Voltage Gain . . . . . . . . . . . . . . . . . . 800kV/V (Min) * Dielectric Isolation
Applications
* Instrumentation Amplifiers * State-Variable Filters * Precision Integrators * Threshold Detectors * Precision Data Acquisition Systems * Low-Level Transducer Amplifiers
Ordering Information
PART NUMBER HA1-5134/883 HA4-5134/883 TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC PACKAGE 14 Lead CerDIP 20 Lead Ceramic LCC
Pinouts
HA-5134/883 (CERDIP) TOP VIEW
OUT1 -IN1 +IN1 V+ +IN2 -IN2 OUT2 1 2 3 4 5 6 7 + -2 + 3+1 4+ 14 13 12 11 10 9 8 OUT4 -IN4 +IN4 V+IN3 -IN3 OUT3 +IN1 NC V+ NC +IN2 4 5 6 7 8 9 -IN2 10 11 12 13 NC OUT2 OUT3 -IN3 2 +3 -+ +1 -+ 4
HA-5134/883 (CLCC) TOP VIEW
OUT1 OUT4 -IN1 -IN4 18 +IN4 17 NC 16 V15 NC 14 +IN3 NC 1
3
2
20 19
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
Spec Number
3-134
511033-883 File Number 3713
Specifications HA-5134/883
Absolute Maximum Ratings
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VInput Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Output Current . . . . . . . . . . . . . . . . . . . .Full Short Circuit Protection Output Current Duration . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite (One Amplifier Shorted to Ground) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC
Thermal Information
Thermal Resistance JA JC CerDIP Package . . . . . . . . . . . . . . . . . . . 75oC/W 20oC/W Ceramic LCC Package . . . . . . . . . . . . . . 65oC/W 15oC/W Package Power Dissipation Limit at +75oC for TJ +175oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W Package Power Dissipation Derating Factor Above +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/oC Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V VINCM 1/2 (V+ - V-) RL 2k
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = 15V, RSOURCE = 50, RLOAD = 100k, VOUT = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 1 2, 3 Offset Voltage Match VIO VIO (Max) -VIO (Min) 1 2, 3 Input Bias Current +IB VCM = 0V, +RS = 10k, -RS = 50 VCM = 0V, +RS = 50, -RS = 10k VCM = 0V, +RS = 10k, -RS = 10k V+ = +5V, V- = -25V 1 2, 3 1 2, 3 1 2, 3 1 2, 3 -CMR V+ = +25V, V- = -5V 1 2, 3 Large Signal Voltage Gain +AVOL VOUT = 0V and +10V, RL = 2k VOUT = 0V and -10V, RL = 2k VCM = 10V, V+ = +5V, V- = -25V, VOUT = -10V VCM = 10V, V+ = +25V, V- = -5V, VOUT = +10V RL = 2k 4 5, 6 4 5, 6 1 2, 3 1 2, 3 4 5, 6 -VOUT1 RL = 2k 4 5, 6 LIMITS TEMPERATURE +25oC +125oC, -55oC MIN -200 -350 -50 -75 -50 -75 -50 -75 10 10 800 500 800 500 100 94 100 94 12 12 MAX 200 350 200 350 50 75 50 75 50 75 -10 -10 -12 -12 UNITS V V V V nA nA nA nA nA nA V V V V kV/V kV/V kV/V kV/V dB dB dB dB V V V V
PARAMETERS Input Offset Voltage
SYMBOL VIO
CONDITIONS VCM = 0V
+25oC +125oC, -55oC +25oC +125oC, -55oC
-IB
+25oC +125oC, -55oC
Input Offset Current
IIO
+25oC +125oC, -55oC +25oC +125oC, -55oC
Common Mode Range
+CMR
+25oC +125oC, -55oC
+25oC +125oC, -55oC +25oC +125oC, -55oC
-AVOL
Common Mode Rejection Ratio
+CMRR
+25oC +125oC, -55oC
-CMRR
+25oC +125oC, -55oC
Output Voltage Swing
+VOUT1
+25oC +125oC, -55oC
+25oC +125oC, -55oC
Spec Number 3-135
511033-883
Specifications HA-5134/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = 15V, RSOURCE = 50, RLOAD = 100k, VOUT = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 4 5, 6 -IOUT VOUT = +10V 4 5, 6 Quiescent Power Supply Current +ICC VOUT = 0V, IOUT = 0mA 1 2, 3 -ICC VOUT = 0V, IOUT = 0mA VSUP = 10V, V+ = +20V, V- = -15V V+ = +10V, V- = -15V VSUP = 10V, V+ = +15V, V- = -20V V+ = +15V, V- = -10V 1 2, 3 Power Supply Rejection Ratio +PSRR 1 2, 3 1 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 15 8 100 94 100 94 MAX -15 -8 6.8 8 6.8 8 UNITS mA mA mA mA mA mA mA mA dB dB dB dB
PARAMETERS Output Current
SYMBOL +IOUT
CONDITIONS VOUT = -10V
+25oC +125oC, -55oC +25oC +125oC, -55oC
+25oC +125oC, -55oC +25oC +125oC, -55oC
-PSRR
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = 15V, RSOURCE = 50, RLOAD = 2k, CLOAD = 50pF, AVCL = +1V/V, Unless Otherwise Specified. GROUP A SUBGROUPS 7 7 7 7 7 7 LIMITS TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN 0.75 0.75 MAX 400 400 40 40 UNITS V/s V/s ns ns % %
PARAMETERS Slew Rate
SYMBOL +SR -SR
CONDITIONS VOUT = -3V to +3V VOUT = +3V to -3V VOUT = 0 to +200mV 10% TR 90% VOUT = 0 to -200mV 10% TF 90% VOUT = 0 to +200mV VOUT = 0 to -200mV
Rise and Fall Time
tR tF
Overshoot
+OS -OS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = 15V, RLOAD = 2k, CLOAD = 50pF, Unless Otherwise Specified. LIMITS PARAMETERS Average Offset Voltage Drift Differential Input Resistance Low Frequency Peak-to-Peak Noise Input Noise Voltage Density Input Noise Current Density SYMBOL VIOTC RIN ENP-P EN IN CONDITIONS VCM = 0V VCM = 0V 0.1Hz to 10Hz RS = 20, fO = 1kHz RS = 2M, fO = 1kHz NOTES 1 1 1 1 1 TEMPERATURE -55oC to +125oC MIN 20 MAX 2 0.25 10 2 UNITS V/oC M VP-P nV/Hz pA/Hz
+25oC +25oC +25oC +25oC
Spec Number 3-136
511033-883
Specifications HA-5134/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized at: VSUPPLY = 15V, RLOAD = 2k, CLOAD = 50pF, Unless Otherwise Specified. LIMITS PARAMETERS Gain Bandwidth Product Unity Bandwidth Product Slew Rate SYMBOL GBWP UBWP +SR -SR Full Power Bandwidth Minimum Closed Loop Stable Gain Rise and Fall Time FPBW CLSG tR tF Overshoot +OS -OS Output Resistance Power Consumption Channel Separation (AC) ROUT PC CS (AC) CONDITIONS VO = 200mV, fO 100kHz VO = 200mV VOUT = -3V to +3V VOUT = +3V to -3V VPEAK = 10V RL = 2k, CL = 50pF VOUT = 0V to +200mV VOUT = 0V to -200mV VOUT = 0V to +200mV VOUT = 0V to -200mV Open Loop VOUT = 0V, IOUT = 0mA VIN = 1VP-P, fO = 100Hz VIN = 1VP-P, fO = 10kHz Channel Separation (DC) NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2VPEAK). 3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.). 4. Measured between 10% and 90% points. CS (DC) VO = 10V (20VP-P), VIO 20V NOTES 1 1 1 1 1, 2 1 1, 4 1, 4 1 1 1 1, 3 1 1 1 TEMPERATURE +25oC +25oC +25oC to +125oC MIN 3 3 0.75 0.6 12 +1 120 120 120 MAX 400 400 40 40 86 240 UNITS MHz MHz V/s V/s kHz V/V ns ns % % mW dB dB dB
-55oC +25oC -55oC to +125oC
-55oC to +125oC -55oC -55oC to to +125oC +125oC
-55oC to +125oC +25oC -55oC to +125oC
+25oC +25oC +25oC
TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group A Test Requirements Groups C and D Endpoints NOTE: 1. PDA applies to Subgroup 1 only. SUBGROUPS (SEE TABLES 1 AND 2) 1 1 (Note 1), 2, 3, 4, 5, 6, 7 1, 2, 3, 4, 5, 6, 7 1
Spec Number 3-137
511033-883
HA-5134/883 Die Characteristics
DIE DIMENSIONS: 91 x 114 x 19 mils 1 mils 2300 x 2900 x 483m 25.4m METALLIZATION: Type: Al, 1% Cu Thickness: 16kA 2kA GLASSIVATION: Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.) Silox Thickness: 12kA 2kA Nitride Thickness: 3.5kA 1.5kA WORST CASE CURRENT DENSITY: 2.5 x 105A/cm2 This device meets Glassivation Integrity Test Requirement per MIL-STD-883 Method 2021 and MIL-I-38535 Paragraph 30.5.5.4. SUBSTRATE POTENTIAL (Powered Up): Unbiased TRANSISTOR COUNT: 160 PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5134/883
-IN1 OUT1 OUT4 -IN4
+IN1
+IN4
V+
V-
+IN2
+IN3
-IN2
OUT2
OUT3
-IN3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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Spec Number 3-138
511033-883

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